Second-harmonic generation from electron beam deposited SiO films
نویسندگان
چکیده
منابع مشابه
Second-harmonic generation in graded metallic films.
We study the effective second-harmonic generation (SHG) susceptibility in graded metallic films by invoking the local field effects exactly and further numerically demonstrate that graded metallic films can serve as a novel optical material for producing a broad structure in both the linear and the SHG response and an enhancement in the SHG signal.
متن کاملDielectric properties of electron-beam deposited Ga2Q3 films
We have fabricated high quality, dielectric GaaO, thin films. The films with thicknesses between 40 and 4000 A were deposited by electron-beam evaporation using a single-crystal high purity Gd,Ga,O,, source. Metal-insulator-semiconductor (MIS) and metal-insulator-metal structures (MIM) were fabricated in order to determine dielectric properties, which were found to depend strongly on deposition...
متن کاملSilicon nitride films deposited with an electron beam created plasma
'G. C. Salter and R. E. Thomas, Solid State Electron. 20, 95 (1977). 2p. Van Halen, R. P. Mertens, R. J. Van Overstraeten, R. E. Thomas, and J. Van Meerbergen, IEEE Trans. Electron Devices ED.25, 507 (19781. -c. E. Norman and R. E. Thomas, IEEE Trans. Electron Devices ED-27, 731 (1980). 4R. E. Thomas, R. B. North, and C. E. Norman, IEEE Electron Device Lett. EDL-l, 79 (1980). Sp. DeVisschere, I...
متن کاملSecond-harmonic generation of the nth-order Bessel beam.
We investigate the second-harmonic generation of the nth-order Bessel beam in the nonlinear medium. The analysis is based on the Khokhlov-Zabolotskaya-Kuznetsov wave equation under the second-order approximation in nonlinear acoustics. The theory indicates that for an nth-order Bessel beam, the second-harmonic beam is nearly diffraction-free in the radial direction and behaves as a Bessel beam ...
متن کاملCompositional and optical properties of SiO x films and (SiO x /SiO y ) junctions deposited by HFCVD
UNLABELLED In this work, non-stoichiometric silicon oxide (SiO x ) films and (SiO x /SiO y ) junctions, as-grown and after further annealing, are characterized by different techniques. The SiO x films and (SiO x /SiO y ) junctions are obtained by hot filament chemical vapor deposition technique in the range of temperatures from 900°C to 1,150°C. Transmittance spectra of the SiO x films showed a...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Optics Express
سال: 2012
ISSN: 1094-4087
DOI: 10.1364/oe.20.013857